Integrated optic devices and photosensitive sol-gel process for producing integrated optic devices

ABSTRACT

A photosensitive sol-gel film containing an organometallic photosensitizer is deposited on the oxide containing surface layer of a silicon substrate. A pattern of white or ultra violet light incident to the photosensitive sol-gel film results in the unbinding of the photosensitizer from the exposed regions of the sol-gel film. A subsequent succession of first and second heating steps results in, first, the removal of the photo sensitizer constituents from the exposed regions of the sol-gel film and, second, the removal of the organic constituents from the exposed regions, resulting in regions doped with a metal oxide with non linear optical properties, such as semicondutive, etc. properties. Optical switches, couplers, waveguides, splitters, interferometers wavelength division multiplexer, Bragg gratings and more can be fabricated. A glass substrate also may be employed, instead of a silicon, in which case a separate silicon oxide surface layer is unnecessary.

This application is a continuation of U.S. patent application Ser. No.09/574,840, filed May 19, 2000, now pending, the contents of which arehereby incorporated by reference as if fully set forth herein.

REFERENCE TO RELATED APPLICATIONS

This application is related to a companion application, Ser. No.09/574,841, filed May 19, 2000.

FIELD OF THE INVENTION

This invention relates to sol-gel derived glass thin films and, moreparticularly, to a thermally-assisted process for fabricating bothpassive and active devices therein as well as to the devices sofabricated.

BACKGROUND OF THE INVENTION

The sol-gel process for forming glass is well known in the art. Further,it is well known to fabricate passive devices such as waveguides,splitters and directional couplers, and grating structures as well asthermo-optic switches using photolithographic processes. Canadian DemandApplication No. 2,218,273 describes a solvent-assisted lithographicprocess in use by Lumenon Innovative Lightwave Technologies, Inc. and isincorporated herein by reference.

The above-identified patent describes a process including the sequenceof steps for forming a silicon dioxide layer on a silicon substrate,depositing a photosensitive sol-gel layer on the silicon dioxide layer,exposing the sol-gel layer to a pattern of ultra violet light tosolidify portions of the sol-gel layer, and (wet) etching to remove thenon-solidified portions of the sol-gel layer. The solidified portion ofthe sol-gel layer, in one embodiment, comprises an elongated ridge fordefining a waveguide. A cladding layer is added on top of the ridgeresulting in a non-planar surface.

A doctoral thesis entitled: “Photolithography of Integrated OpticDevices in Porous Glasses”, City University of New York, 1992 by E.Mendoza, one of the applicants herein, describes techniques forfabricating integrated optic devices in porous glass employing a varietyof reactants. The thesis describes sol-gel as a technique for formingbulk porous glass.

BRIEF DESCRIPTION OF THE INVENTION

The present invention is directed at extensions of the bulk techniquesdescribed in the above-noted thesis to sol-gel thin films. Specifically,a technique for the photolithographic fabrication of integrated opticstructures in thin films of photosensitive sol-gel glasses is describedhere. This technique involves the formation of a photosensitive sol-gel,including an organometallic photosensitizer, on a suitable substrate(glass, silicon, or any other support material). Next, thephotosensitive film is exposed to white or ultraviolet light inducing aphotochemical reaction in the photosensitive sol-gel glass network withthe end photo-product being a metal oxide. The photodeposited metaloxide is permanently bound to the sol-gel film glass network as a glassmodifier during a heat treatment process, which in turn induces apermanent refractive index increase in the glass. The refractive indexincrease is dependent on the concentration of the photosensitizer and onthe light energy used in the exposure process. Therefore, a spatiallyvarying light intensity during exposure results in a spatially varyingrefractive index profile. This refractive index profile induced in thefilm can be designed to guide light.

Exposure of the photosensitive sol-gel film to white or ultravioletlight induces the unbinding of the metal from the photolabile moietycomponent of the photosensitizer followed by the binding of the metal tothe sol-gel film. The exposed regions of the sol-gel film are convertedto a metal oxide silica film by first and second step heatings at a lowtemperature and high temperature, respectively. The low temperaturedrives out the unexposed (unbound) photosensitizer and the unboundphotolabile moiety. The higher temperature step unbinds the organiccomponent from the bound photosensitizer and drives it off. This stepalso permanently binds the metal to the silica film forming a metaloxide glass modifier. If the sol-gel film is deposited on a glass orsilicon substrate, a metal oxide doped silica region of Si—O-M-O—Si isformed in the exposed regions acting as a glass modifier which in turnmodifies the refractive index. The unexposed photosensitizer is drivenoff during the heat treatment steps. Since no material is removed fromthe sol-gel film in this process, as in the case of prior-art-processes,the resulting top surface is planar, thus leading to a simpler processfor producing devices and increase lifetime of resulting devices.

The index of refraction of the light guiding waveguide is determined bythe concentration of the metal oxide and by the type of metal oxide(GeO₂, SnO₂, PbO₂, TiO₂, among others) photodeposited. Accordingly, aburied waveguide of metal oxide doped silica material of relatively highindex of refraction is sandwiched between regions of a dielectricmaterial with relatively lower index of refraction. Therefore, thechange in refractive index between the metal oxide doped silicawaveguide and the dielectric material is controlled by the concentrationof the metal oxide and by the type of metal oxide. If the photodepositedmetal oxide doped waveguide exhibits non-linear optical properties(semi-conductive, electro-optic, magneto-optic, and/or all-optical)active optical devices can be realized in this material system. Ifelectrodes are attached adjacent to the waveguide and a voltage applied,for example, an electro-optic switch or an optical modulator may beformed using a varying electrical field for varying the index ofrefraction of the waveguide. The temporary change in refractive indexcan be used to switch or modulate the light guided through thewaveguide.

The invention thus is based on the realization that the richness in thenumber and variety of constituents which can be included in a sol-gelfilm enable unique integrated optic structures to be fabricated,particularly with the use of photo masks, which are not achievable withalternative techniques. Specifically, the technique permits a highdegree of control not only in defining high index of refraction channelsin a sol-gel film but also in controlling the index of refractionincrementally along the length of the channel and from channel tochannel in multichannel devices such as wavelength division multiplexers(WDM). Accordingly, the index can be changed to enable strongly guidedwaveguides to be fabricated creating low-loss, small bend radii thuspermitting a large number of channels to be fabricated in a single film.A two-hundred and fifty-six channel wavelength division multiplexer, forexample, can be made in a very small chip because of the tailoring ofthe indices of refraction channel to channel and along the length of thechannel. Moreover, the ends of the channels can be made with indices ofrefraction to obtain NA matching to optical fibers.

Further, because the technique produces buried channels (waveguides) andsince the buried channels can be made in successive sol-gel glass films,multiple layer devices can be realized, each layer (film) having aplurality of channels.

The high degree of control of the index of refraction along a channellength also permits Bragg gratings to be formed simultaneously with theformation of a channel, thus providing a simple technique for producing,for example, integrated optic lasers. Abundance of compatibleconstituents such as erbium, for example, also permits amplification oflight signals in the channels. Other constituents allow for theformation of electro-optically active waveguides permitting, forexample, modulation of light signals in the waveguide.

The technique not only permits the foregoing unique structures to befabricated but also permits the fabrication of optical couplers,splitters, switches, tunable filters, amplifiers, modulators, combiners,directional couplers, optical add-drops, gratings, both active andpassive devices described, for example, in Optical Fiber Communications111B, Academic Press, New York edited by Ivan P. Kaminow and Thomas L.Koch, 1997.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 are schematic side views of alternative generic structuresin accordance with the principles of this invention;

FIGS. 3, 4 and 5 are schematic side views of electro-optic,magnetic-optic and optical switches, respectively, in accordance withthe principles of this invention;

FIGS. 6 and 7 are schematic side views of a tunable Bragg grating and atunable add/drop filter in accordance with the principles of thisinvention.

FIG. 8 is a block diagram of the method for fabricating the structure ofFIGS. 1 and 2;

FIGS. 9, 10, 11 and 12 are schematic top views of alternative waveguidestructures in accordance with the principles of this invention;

FIGS. 13 and 14 are schematic projection and top views of a variableindex waveguide array used in a wavelength division multiplexer and agray scale mask for the fabrication thereof, respectively;

FIG. 15 is a graph of waveguide propagation loss versus channel bend;

FIG. 16 is a schematic illustration of an array of curved waveguideswith variable refractive indices for use in the fabrication of arraywaveguide grating structures for WDM applications;

FIG. 17 is a schematic representation of a prior art “Chirped” Bragggrating;

FIG. 18 is a schematic representation of a “Chirped” Bragg gratingstructure in accordance with the principles of this invention;

FIG. 19 is a schematic representation of a multilayer device each layerof which includes an array of curved waveguides such as those shown inFIG. 16; and

FIG. 20 is a block diagram of the method for fabricating themultilayered structure of FIG. 19.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS OF THIS INVENTION

The invention is based on the recognition that a photosensitive sol-gelfilm including an organometallic photosensitizer can be made into ametal oxide material when exposed to ultra violet or white light in thewavelength range of from about 200 nm to 700 nm followed by a controlledheat treatment. The invention is further based on the realization thatthe exposure of such a film to that light through a photo mask can bemade to produce a waveguide channel of relatively high index ofrefraction, metal oxide material sandwiched between regions ofdielectric, low refractive index material. Furthermore, based on theselection of appropriate precursors, the photodeposited metal oxidedoped waveguide exhibits non-linear optic properties (semiconductive,electro-optic, magneto-optic and/or all optic) so that electrodes placedadjacent to the waveguide for creating electric fields in response toapplied voltages can induce temporary charges in the refractive index ofa waveguide.

In this context, FIGS. 1 and 2 show schematic side views of a work piece10 and 20 respectively. In FIG. 1, a silicon substrate 11, 6″×6″×1 mm,is coated with a silicon dioxide (deposited or grown) layer 12 that is1-2 microns thick. The silicon dioxide layer 12 has a photosensitivesol-gel film 13 formed on it by well-understood techniques such asspinning and/or dip coating.

In FIG. 2, the substrate 21 comprises glass, in which case no silicondioxide layer is required. A photosensitive sol-gel film 23 is formeddirectly on the glass substrate.

The sol-gel film is represented, in FIGS. 1 and 2, as having R-M-Xchemical constituents in it. These materials are added to the sol-gel bydissolving them in the sol-gel solution. The sol-gel film illustrativelyhas a thickness of about 1-5 microns.

The notation—R—refers to anyone of a group of volatile organic materialsincluding CH₃; CH₃—CH₂, CH₃—CH₂—CH₂ and the like. The notation—M—refersto any one of the metals of group IVB of the periodic table includingGe, Sn and Pb; group VIB including Se and Te; group VIIIA including Fe,Co, Ni; and group IVA including Ti and Zr and rare earth metals such asEr, Eu, Pr and Tm. The concentration of the metal determines the indexof refraction of the sol-gel film in conjunction with the energy of thelight used in the subsequent exposure steps.

The—X—notation is the photolabile component of R-M-X and represents ahalogen which includes chlorine, bromine, iodine and fluorine, but alsocarbonyls (CO).

The photosensitive sol-gel film, in accordance with the principles ofthis invention initially includes R-M-X as indicated in FIG. 1.

The photosensitive sol-gel film (13 or 23) is exposed to white or ultraviolet radiation through a mask to define, illustratively, threeregions. The regions are identified in FIG. 1 as exposed region 31 withunexposed regions 32 and 33 defining interfaces 34 and 35 with region 31respectively. FIG. 1 also can be seen to include a silicon substrate 11and a silicon dioxide surface layer 12.

FIG. 3 is a top view of an electro-optic switch 40 including first andsecond waveguiding channels 41 and 42 fabricated as described inconnection with FIGS. 1 and 2. The channels are in close proximity toone another at region 43. Electrodes 44 and 45 are formed over channel41 and channel 42, respectively, at region 43. A voltage, indicated bythe V+ and V− signs, produces a localized change in the index ofrefraction that causes a signal, Pin, in channel 41 to exit channel 42(Po2). In the absence of such a voltage, the signal (Pin) exits channel41 (Po1). Thus, a high-speed electro-optic switch is realized.

Alternatively, electrodes 44 and 45 may be formed directly in thesol-gel film by using a photosensitizer that leads to the deposition ofa high conductivity material when exposed to light. To this end, aphotosensitized thin film is exposed through a mask to form theelectrodes and then heat treated to remove the photosensitizer but at atemperature which avoids consolidating the film. Next a secondphotosensitizer is introduced into the film, exposed through a mask toform the waveguide and the heat treatment to remove the photosensitizerand consolidate the film is carried out.

FIG. 4 shows a magneto-optic switch fabricated as discussed inconnection with FIGS. 1 and 2 using an M constituent which confersmagnetic properties to channels 50 and 51 in FIG. 4. Magnets 52 and 53are positioned at region 54 at which the channels come into closeproximity. In the presence of a magnetic field, an input signal Pin inchannel 50 exits channel 51 (Po2). In the absence of a magnetic field,the signal exits channel 50 (Po1).

FIG. 5 shows an all optical switch 60 with channels 61 and 62. Thechannels are in close proximity at region 63. Region 63 includes anoptically active dopant. If pump light is introduced at the input 65 ofchannel 62, a signal Pin at the input of channel 61 exits channel 62(Po2). In the absence of pump light, the signal exits channel 61 (Po1).

FIGS. 3, 4, 5, 6 and 7 are illustrative of electronic, magnetic or opticfield control which permit entire categories of devices to befabricated. These include modulators, directional couplers, tunablegratings and total internal reflection deflectors among others.

The inclusion of materials such as tin oxide, lead oxide, titaniumoxide, and zirconium oxide, thulium oxide allows for the fabrication ofelectro-optic switches. The inclusion of materials such as iron, ironoxide, nickel and nickel oxide allows the fabrication of magneto-opticswitches. The inclusion of rare earth materials such as erbium oxide,neodymium oxide, ytterbium oxide and praseodymium oxide allows thefabrication of all optical switches.

The operating principle of the electro-optic switch is based on the useof a metal oxide waveguide with electro-optic properties. The variationof an electric field to many electro-optic materials leads directly to avariation in the real and imaginary components of the refractive index.This effect can be used for switching in an integrated optic device,based on a waveguide proximity coupler structure as shown in FIG. 3. Inthis design, when the voltage is off the light beam Pin travels directlythrough the waveguide with output Po1, when the field is on, the inducedrefractive index change causes the light beam to couple into theadjacent waveguide with output Po2. Turning the voltage off causes thelight to return to its original state with output Po1.

A similar effect occurs in the case of the magneto-optic switch. In thiscase a waveguide with magneto-optic properties is used, such that thevariation of a magnetic field in the vicinity of the magnetic waveguideleads directly to a variation in the real and imaginary components ofthe refractive index. Hence, by applying a magnetic field to thestructure, the light output in FIG. 4 can be switched between the twowaveguide arms (Po1 and Po2) of the structure.

Similarly, the operating principle of the all-optical switch is based onthe use of a dopant material on the active part of the integrated opticstructure, the refractive index of which (real and imaginary components)is modified when excited by an external laser source (light pump) asshown in FIG. 5. In this design, when the light pump is off the lightbeam Pin travels directly through the waveguide with output Po1. Whenthe light pump is turned on, the induced refractive index change causesthe light beam to couple into the adjacent waveguide with output Po2.With the pump off, the light returns to its original state with outputPo1.

FIG. 6 illustrates a tunable Bragg grating filter operable to reflect aselected wavelength. The figure shows a channel 70 fabricated asdiscussed in connection with FIGS. 1 and 2. The Bragg grating isindicated at 71 and electrodes 72 and 73 are located to produce anelectric field to change the index of refraction of the channel at thegrating. In the presence of the field, an input signal with wavelengthsλ1, λ2 . . . λx . . . λn enters the channel with λ1, λ2 . . . λn exitingthe channel and wavelength λx reflected as indicated.

FIG. 7 illustrates a tunable add/drop filter fabricated as described inconnection with FIGS. 1 and 2. The filter includes channels 80 and 81with a common section 82 which includes a Bragg grating 83. Electrodes84 and 85 are positioned to generate an electric field which changes theindex of refraction in section 82. An electrical field applied to theelectrodes tunes the Bragg wavelength to the value λx depending on themagnitude of the electrical field so that wavelength λx exits channel 81at 87 and may be added at 88.

The devices of FIGS. 3 through 7 are produced by exposing aphotosensitive sol-gel film to visible or ultra violet light. The lightis operative to unbind the photolabile (X) component from thephotosensitizer and to bind the metal (M) permanently in the exposedregion. The light, illustratively, is ultra violet in a wavelength rangeof about 200 nm-400 nm and visible in the wavelength range of 400 nm to700 nm and exposure is for 5 minutes to 48 hours duration depending onlight intensity.

The light exposure is followed by a sequence of first and second heatingsteps. The first heating step is at a temperature of about 300° C. for aperiod of 1 hour and results in the driving off of the unexposedsensitizer from the entire sol-gel layer and the unbound photolabilemoiety (X) from the exposed regions of the sol-gel layer. The secondheating step is at about 900° C. for about 1 hour duration and resultsin the unbinding of the R component and the driving off of thatcomponent from the entire sol-gel film. A subsequent heating step atabout 1050° C. can consolidate the pores in the sol-gel film yielding asolid, non-porous glass. The resulting structure, as shown for examplein FIG. 3, includes channels 41 and 42 comprising Si—O-M-O—Si materialsand regions outside the channels comprising SiO₂. The channels are ametal oxide doped silica region in the embodiment of FIG. 4; the regionsoutside the channels are electrically insulating.

The metal oxide induced by the binding of the component (M) in region 31(of FIG. 1) defines the index of refraction in the channels.Accordingly, the concentration of metal oxide can be selected so thatthe index of refraction in the channels relates to the indices ofrefraction in regions outside the channels to define a waveguide forlight. A voltage signal impressed between electrodes as indicated inFIG. 3, permits further control of the index of refraction in thechannels and thus to the deflection of the signals passed through thewaveguide.

FIG. 8 is a flow diagram of the method for fabricating the device ofFIGS. 1 and 2. Specifically, block 91 indicates the formation of aphotosensitive sol-gel film on a suitable substrate such as silica glassor silicon containing a thermally grown silica layer. Block 92 indicatesthe exposure of at least one channel of the sol-gel layer to (visibleor) ultra violet light. Block 93 represents the first heating step ofabout 300° C. to evaporate the unexposed photosensitizer (R-M-X) and theunbound photolabile moiety (X). Block 94 represents a second heatingstep at about 900° C. to unbind and evaporate the organic material (R)from the layer.

The photosensitive sol-gel process permits the precise control ofrefractive index to produce a variable refractive index distributionalong the horizontal plane of the film. To obtain variable refractiveindex gradient waveguide channels, the photosensitive sol-gel film (13of FIG. 1) is exposed using a photo mask. Exposure to UV or visiblelight through the mask induces a photochemical reaction of thephotosensitizer immobilized in the sol-gel matrix. A percentage ofphotosensitizer transforms to a metal oxide depending on the degree oflight exposure (controlled by the photo mask). The metal oxide acts as arefractive index modifier of the silica film. Thus, the use of a grayscale photo mask allows the concentration of metal oxide, or refractiveindex profile, along the light propagation path of the waveguide(channel) to be controlled.

The ability to precisely control the refractive index of the waveguideduring the light exposure process allows the fabrication of structureswith complex index profiles. These include the ability to fabricatewaveguides such as the one shown in FIG. 9 with altered index profiles.In this waveguide design it is possible to combine regions of smallrefractive index change forming weakly guiding waveguides with numericalapertures matched to that of telecommunication fibers, with regions ofhigh refractive change forming strongly guiding waveguides, and back toregions of small refractive index change forming weakly guidingwaveguides. This variation in index can be graded adiabatically toeliminate the reflections associated with abrupt changes in index ofrefraction. The combination of these waveguide structures allows thecoupling of fibers to the waveguide as well as to have the creation ofregions with special properties, i.e. passive waveguides with variablerefractive indexes such as gratings (FIG. 10), or tight bends such asthose used in phase array grating designs (FIG. 11), or activewaveguides with regions that exhibit electro-optic or magneto-opticactivity (FIG. 12).

FIG. 13 is a schematic representation of an integrated optic chipwaveguide array illustratively including four channels 120, 121, 122,and 123. The difference between the refractive index of the core (n_(z))and the refractive index of the cladding (n₁) is expressed as Δn. Thus,the Δn for channel 120 is n_(n)-n₁, the Δn for channel 121 is n₄-n₁, theΔn for channel 122 is n₃-n₁, and the Δn for channel 123 is n₂-n₁.

The fabrication of the structure of FIG. 13 is as described hereinbeforeexcept that a photo mask is used as shown in FIG. 14. As can be seen inthe figure, the mask for channel 123 is almost black; the mask forchannel 122 is dark gray, the mask for channel 121 is a lighter gray andeven lighter for channel 120, Additional channels would require lighterand lighter masks as indicated in the figure, the range going fromalmost totally black to clear. The regions between the channels (thecladding) require a black portion of the mask. The use of the photo maskallows all the channels to be defined simultaneously.

The effect of variable refractive index is based on the photochemistryof the photosensitive sol-gel film where for each photon of light aphotosensitive molecule is transformed into a metal-oxide. Each of themetal oxide particles induces a refractive index change in the glass.The larger the number of metal oxide particles photo-produced, thelarger the refractive index change. Consequently, by using a photo mask,we can produce a variable index integrated optic chip because the darkerregions of the mask allow fewer photons to expose the chip than thelighter regions of the mask.

This same procedure can be used in the fabrication of an array of curvedwaveguides with variable refractive indices. By controlling therefractive index of the curved waveguides (channels) during the lightexposure process, we can produce curved waveguides with smaller andsmaller bending radii. Since the bending radius is directly related tothe refractive index change of the waveguide, the larger Δn (FIG. 13),the smaller the bending radius.

FIG. 15 is a graph of waveguide propagation loss (db) versus bend. It isclear from the figure that the losses for the small bend (Δn_(n)) is thesame for the losses for the large bend (Δn₁). This property allows forthe fabrication of dense (highly packed) curved waveguide arrays becausevery small bending radii can be achieved. FIG. 16 shows schematically anarray of curved waveguides 150, 151, 152, 153, 154, and 155 withvariable indices with radii of curvature becoming increasingly smallerfrom channel 150 to channel 155.

The simultaneous control of refractive index differential isparticularly useful in the fabrication of dense and ultra-dense,variable-index, phase-array-waveguide gratings commonly used forfabricating integrated optic WDMs; the WDM structure typically requirescurved waveguides in the array. Thus, the use of a gray scale mask andthe resulting ability to achieve a variable and/or controlled refractiveindex in such an array allows the fabrication of highly packed chips ina relatively small package.

This property also is useful for producing chirped Bragg gratings usefulfor dispersion compensation in telecommunication systems. FIG. 17illustrates such a prior art device. FIG. 17 shows a channel 169 withstripes 170, 171, 172 . . . N where the refractive index difference Δnis constant and the spacing between stripes (e.g. 174, 175) isdifferent.

In accordance with the principles of this invention, a chirped Bragggrating structure is characterized by a refractive index change and thespacing between stripes is constant. FIG. 18 shows a chirped Bragggrating structure formed in a photosensitive sol-gel film with stripes161, 162, 163 . . . N where the spacings 164, 165, . . . are constantbut the change in index of refraction Δn varies from Δn₁ to Δn₂ and . .. Δn_(n) along the length of the grating. The use of a photo maskpermits easy control over the index of refraction differenceparticularly in grating structures where the periodicity is typicallysub-micron.

FIG. 19 shows film 149 of FIG. 16 formed on a substrate 181 which maycomprise glass or silicon with an SiO₂ surface layer as discussedhereinbefore. The sequence of heating steps causes a shrinkage in thethickness (vertical dimension) of film 149. But the film otherwiseprovides a suitable planar substrate for the formation of additionalfilms in each one of which may be formed a multichannel device (as forexample) shown for film 149.

FIG. 19 shows one such additional film 182 extending between an input183 of multichannel light (typically via an optical fiber not shown) andan output indicated by arrows 184.

A multilayered device of the type shown in FIG. 19 is fabricated by themethod described in connection with the flow diagram of FIG. 20. Theflow diagram indicates the steps 91-94 of FIG. 8 are carried out toproduce film 149 of FIG. 19 as indicated by block 190. Thereafter, thefilm produced by steps 91-94 is used as a substrate for a second film(182) as indicated by block 195 of FIG. 20. The sequence of steps isrepeated for each film required as indicated by block 196.

A multilayered device as shown in FIG. 19 is relatively easy tofabricate because of the variety of materials available, the use of agray scale mask, and the fact that buried (waveguides) channels areproduced and the fact that films having thickness (greater than onemicron) suitable for integrated optics devices do not shrink laterally.

1. An multilayered integrated optic device comprising: (a) a substrate;(b) a first photosensitive sol-gel derived film layer disposed on saidsubstrate, said first sol-gel film comprising a first embedded waveguidechannel having different concentrations of photodeposited metal oxidealong the axis of said first channel; and (c) a second photosensitivesol-gel derived film layer disposed on said first sol-gel film, saidsecond sol-gel film comprising a second embedded waveguide channelcomprising photodeposited metal oxide.
 2. The apparatus as in claim 1wherein said first sol-gel film further comprises a third embeddedwaveguide channel having different concentrations of photodepositedmetal oxide along the axis of said third channel; and said secondsol-gel film further comprises a forth embedded waveguide channelcomprising photodeposited metal oxide.
 3. An apparatus comprising asubstrate having a silica surface layer, said apparatus including a thinsol-gel glass film thereon, said sol-gel film including therein an inputphotodeposited metal oxide waveguide channel, and first and secondoutput photodeposited metal oxide waveguide channels, said apparatusincluding switch means for coupling light signals from said inputchannel to either first or second channel controllably.
 4. The apparatusas in claim 3 wherein said switch means is an electro-optic switch. 5.The apparatus as in claim 3 wherein said switch means is a magneto-opticswitch.
 6. The apparatus as in claim 3 wherein said switch means is anall-optical switch.
 7. An integrated optic device comprising: (a) asubstrate; and (b) a photosensitive sol-gel derived film layer disposedon said substrate, said sol-gel film comprising a plurality of embeddedwaveguide channels each having a different photoinduced refractive indexprofile along its axis, wherein each waveguide channel comprises adifferent concentration of photodeposited metal oxide than that of anadjacent channel.
 8. An integrated optic device according to claim 7wherein said substrate comprises glass.
 9. An integrated optic deviceaccording to claim 7 wherein said substrate comprises silicon andincludes a surface layer of silicon dioxide.
 10. An integrated opticdevice according to claim 7 wherein said plurality of embedded waveguidechannels define a waveguide array.
 11. An integrated optic deviceaccording to claim 7 wherein each of the refractive index profiles forsaid plurality of embedded waveguide channels comprises a variation inthe index of refraction along the axis of said channels.
 12. A methodfor forming a high refractive index metal oxide waveguide channel in asol-gel derived glass, said method comprising the steps of forming aphotosensitive sol-gel film including an organometallic photosensitizeron a silica substrate said method comprising the steps of exposing saidfilm through a mask to light of a wavelength and for a time forunbinding different amounts of metal constituents and of said sensitizerin different sections along at least a first channel thereof, exposingsaid film to heat at a first temperature and for a time to drive off theunbound sensitizer and to bind the metal constituents of said sol-gelfilm, and exposing said layer to heat at a second temperature higherthan said first temperature for a time to unbind and drive off theorganic constituents of said sol-gel film.
 13. A method as in claim 12wherein the step of exposing said layer to ultraviolet light is carriedout through a photo mask for confining said light to a first channel ofsaid film, and for defining second and third unexposed regions to firstand second sides of said channel, said unexposed regions defining firstand second interfaces with said first channel respectively.
 14. A methodas in claim 13 wherein said step of exposing said layer to ultra violetlight through a photo mask defines a plurality of spaced-apart firstchannels, each of said first regions having first and second interfaceswith second and third unexposed regions respectively, said channelshaving differently varying indices of refraction therealong.
 15. Amethod for forming an integrated optic chip including a plurality ofwaveguiding channels having a longitudinal axis extending from an inputto an output end, said method comprising the steps of: a. forming aphotosensitive sol-gel film including an organometallic photosensitizeron a substrate, the organometallic photosensitizer comprising a metalconstituent and a photolabile moiety constituent; b. exposing saidsol-gel film through a gray scale mask having a different region ofopacity corresponding to each of said channels to light, whereindifferent amounts of light energy pass through each region of opacity insaid gray scale mask, and wherein the light is of a wavelength and isdelivered for a time sufficient to photolyze different concentrations ofphotosensitizer within a plurality of exposed regions of said sol-gelfilm corresponding to said channels and thereby unbind a differentconcentration of photolabile constituents from metal constituents withineach of said channels; c. heating said sol-gel film at a firsttemperature and for a time sufficient to drive off unphotolyzedphotosensitizer and bind said different concentrations of said metalconstituents to said sol-gel film in said channels permanently; and d.heating said sol-gel film at a second relatively higher temperature forunbinding the organic constituents of said sol-gel film and for drivingoff the organic constituent.